Condition to eliminate thermal run away in BJT

The condition to eliminate the thermal runaway in BJT is to bias the transistor in such a way that the Vce < Vcc/2, where Vcc is the DC power supply, Vce is collector to emitter voltage. This is derived on the fact that the rate at which heat is removed from the junction should be more compared to the rate at which heat is dissipated at the junction.